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See Product Specifications
| номер части: | TK200F04N1L,LXGQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 935fd920957a66dcbc9d75f86ae6e22c |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | 1c872e654a44e527e6f5be9fe0ac9a6e |
| Vgs(th) (Max) @ Id: | 2da3540dbfa7d901b7d797a5001bb2e7 |
| Gate Charge (Qg) (Max) @ Vgs: | c44bea3f5d4cc1e50dab7c6d0a074588 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | d408e3f693c7e8ea67bd4f8f5018fedf |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 925b824d4ea9a147ba322c6feb66115c |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | f7944d055bb3cc70853f272a8d27664f |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
