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See Product Specifications
| номер части: | TK28N65W,S1F |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 347f255197950e6b02089b73b6a8acdd |
| Current - Continuous Drain (Id) @ 25°C: | 07f1a427d77c3faaf6239fb9f8606f42 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 307773dab194d6a844abbd5c89e95964 |
| Vgs(th) (Max) @ Id: | cfb0f58c98a08049263e3e3ee4a60aef |
| Gate Charge (Qg) (Max) @ Vgs: | 4654abfef5e6b00713567f19e88c7a76 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 152fd1977c7e1eeb2dc30e99c50b4204 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | eedcf883fa5cf18823fd32a2edeed98b |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 566bc0f44c33782e0104763798b071ab |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
