TK2P60D(TE16L1,NQ)

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Mfr. #:

TK2P60D(TE16L1,NQ)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 2A PW-MOLD

Упаковка:

Tape & Reel (TR)

Datasheet:

TK2P60D(TE16L1,NQ) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK2P60D(TE16L1,NQ)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	49be2d3befbb5f287b3239b421243897
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	1fed66fb6785af0df451ab47f68dbca2
Vgs(th) (Max) @ Id:	a08150ab78b1acb5838dbc11e244b833
Gate Charge (Qg) (Max) @ Vgs:	9c776809f0ec6511de1829648c094927
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	1fc9ee5a53facf079b586ce585b37835
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	13a5779ced06888106a2acdcd2b95b6f
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95