TK2R4E08QM,S1X

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Mfr. #:

TK2R4E08QM,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS10 TO-220AB 80V 2.4MOHM

Упаковка:

Tube

Datasheet:

TK2R4E08QM,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK2R4E08QM,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	51f14857715e343ab990e4bde4b4bde1
Vgs(th) (Max) @ Id:	35dedf6c346e06b792827ab2a35d9bca
Gate Charge (Qg) (Max) @ Vgs:	618cf05093785eac677991d6c5d1477e
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	0ad922ed681cf1739b230bacae6a396e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ac1760e6638f8a136f249122761ef823
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468