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See Product Specifications
| номер части: | TK30E06N1,S1X |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | 5ed120537240e8727ce6d799a946ca92 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | df80c55b4f8ea45405f5172dce5a40af |
| Vgs(th) (Max) @ Id: | 2f023d837a472af068aa2c5ef59e023a |
| Gate Charge (Qg) (Max) @ Vgs: | a230bee065da054ea2538ec7bec29016 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2a91802deb6624f50541335f2f309c0e |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | f894c50d1a6bc30398c8bc95d828be6a |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
