TK35N65W,S1F

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See Product Specifications

Mfr. #:

TK35N65W,S1F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 650V 35A TO247

Упаковка:

Tube

Datasheet:

TK35N65W,S1F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK35N65W,S1F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	3ae79fae666fbc50d5011ee35b33c896
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	3382412a533cbdbf04a396540212155e
Vgs(th) (Max) @ Id:	a4a7c3353f7101babc12ae67e1ff26e8
Gate Charge (Qg) (Max) @ Vgs:	f1e9e5f5ca4554397dea1bfdf1aa69c6
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	dbca93b59c1081620782f67ca6ee4459
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	22ede6308a47e9e38715b44adbbde3d4
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	566bc0f44c33782e0104763798b071ab
Package / Case:	748a8539a6c3c7dbdb455218c72fac40