TK39J60W,S1VQ

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Mfr. #:

TK39J60W,S1VQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 38.8A TO3P

Упаковка:

Tube

Datasheet:

TK39J60W,S1VQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK39J60W,S1VQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	f2ff36aab61e86b37cb8f916cc5030e2
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	b671ff72fb152bc3b6db37dae805b721
Vgs(th) (Max) @ Id:	9423820cc01811ca38d1e6d0ee61c387
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	dbca93b59c1081620782f67ca6ee4459
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	22ede6308a47e9e38715b44adbbde3d4
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153