TK3A60DA(Q,M)

Images are for reference only
See Product Specifications

Mfr. #:

TK3A60DA(Q,M)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 2.5A TO220SIS

Упаковка:

Tube

Datasheet:

TK3A60DA(Q,M) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK3A60DA(Q,M)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	4d96b9851429d6972897b11738746889
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	9e512b1fbac91354f0c9fcf07f357d2a
Vgs(th) (Max) @ Id:	a08150ab78b1acb5838dbc11e244b833
Gate Charge (Qg) (Max) @ Vgs:	6b13b0c221a37cd73782591e7a07ef5c
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	b4c873a7039e7ee65ca12daa0d52f6ca
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6395095cf5d045979816b63506fbde01
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8