TK3R2E06PL,S1X

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See Product Specifications

Mfr. #:

TK3R2E06PL,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

X35 PB-F POWER MOSFET TRANSISTOR

Упаковка:

Tube

Datasheet:

TK3R2E06PL,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK3R2E06PL,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	77baac4be13b6a83d8c4e5b0d4d61304
Vgs(th) (Max) @ Id:	337809e067a16f95f0438a9ff4548bf2
Gate Charge (Qg) (Max) @ Vgs:	eaacaedd2add46006fc6adec9621aefa
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3e6f87c35e2fac6960081df8c1704326
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	196f6ced0e1bf88f38ea62fb7150be5f
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468