TK3R3A06PL,S4X

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Mfr. #:

TK3R3A06PL,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

X35 PB-F POWER MOSFET TRANSISTOR

Упаковка:

Tube

Datasheet:

TK3R3A06PL,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK3R3A06PL,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	95434128ad78f7b3a10860309664620d
Vgs(th) (Max) @ Id:	337809e067a16f95f0438a9ff4548bf2
Gate Charge (Qg) (Max) @ Vgs:	eaacaedd2add46006fc6adec9621aefa
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3e6f87c35e2fac6960081df8c1704326
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0c6019a9db9912572c44701aada80fd8
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8