TK40P03M1(T6RDS-Q)

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See Product Specifications

Mfr. #:

TK40P03M1(T6RDS-Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 40A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK40P03M1(T6RDS-Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK40P03M1(T6RDS-Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	e50dae7122d252f8a7317c11068ffb56
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	58365baa5ab34d3b2935c2066709f9c7
Vgs(th) (Max) @ Id:	21e81f1947254f4df5fa01fc08560fce
Gate Charge (Qg) (Max) @ Vgs:	70f4ada9e23c7c5ec82a2c86a911db85
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	00eca0670e96e9e1ea058a712871dd34
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95