TK40S10K3Z(T6L1,NQ

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Mfr. #:

TK40S10K3Z(T6L1,NQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 40A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK40S10K3Z(T6L1,NQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK40S10K3Z(T6L1,NQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	e50dae7122d252f8a7317c11068ffb56
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	6fb5e3253ad94f1b4d906797744ad366
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	8efc990a780d589424d353135dbf1bb9
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4e2d0911138ee596b2c0b20fbcbc3b92
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f0e30a5df8cf964e5c8ae4b4e29e9162
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95