TK430A60F,S4X(S

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See Product Specifications

Mfr. #:

TK430A60F,S4X(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH

Упаковка:

Bulk

Datasheet:

TK430A60F,S4X(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK430A60F,S4X(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	dfff9d157e910a79f49b3b130f9e83bb
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	9fae30116b7b8b4ef7e7809c45371eb8
Vgs(th) (Max) @ Id:	0be9882f059c7680efd19d09a59b2073
Gate Charge (Qg) (Max) @ Vgs:	1969d6a5719238554411aa67c6a1e5a8
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	37c1ad43c875443598214b6e5d383ca7
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	880570d04bb0963921348c898552e59a
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8