TK4R3E06PL,S1X

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Mfr. #:

TK4R3E06PL,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 80A TO220

Упаковка:

Tube

Datasheet:

TK4R3E06PL,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK4R3E06PL,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	0e9e3154b94fc8f05e5866599e0fbc3d
Vgs(th) (Max) @ Id:	fddd40c656bc171019d807053034d462
Gate Charge (Qg) (Max) @ Vgs:	aef15f125501930b24858c8e61a94609
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	8e7393ce3e238ec41a2968597b88342c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c50b79aaa5d7fb9170b358088ac8d27b
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468