TK55D10J1(Q)

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See Product Specifications

Mfr. #:

TK55D10J1(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 55A TO220

Упаковка:

Tube

Datasheet:

TK55D10J1(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK55D10J1(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	d1488f76ebdc9346fe27e1e32f2e752b
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	1651e2ab0a49f74d1de56fc7e94bc9ba
Vgs(th) (Max) @ Id:	e27cb9a9021a7cc3970301d6fa06979f
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	56a72d03cac7fdbf39ca465776a13fa9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e5511f6cedc0c07c4c7e079460a165c6
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	1c0d65007209dd536477915624195d4c
Package / Case:	46bb638de2ea693de650d7f1c3115468