TK560P60Y,RQ

Images are for reference only
See Product Specifications

Mfr. #:

TK560P60Y,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CHANNEL 600V 7A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK560P60Y,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK560P60Y,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	3d28ab81c1ea57e4bc54bda355458666
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	3880f451f50f8609e86eb23f24fb3062
Vgs(th) (Max) @ Id:	645724fddbb8c2754d7c84307596ed20
Gate Charge (Qg) (Max) @ Vgs:	cacaf6e2370296df565d5ad62dee01d0
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	b22dc2aa11be4830e775f09ee798bcd2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95