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| номер части: | TK58A06N1,S4X | 
| Категория: | Discrete Semiconductor Products | 
| Подкатегория: | Transistors - FETs, MOSFETs - Single | 
| Производитель: | Toshiba Semiconductor and Storage | 
| Упаковка: | Tube | 
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d | 
| FET Type: | 43272ae8a787f198ca6b6227abc259ef | 
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc | 
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 | 
| Current - Continuous Drain (Id) @ 25°C: | 036d2b0bba9e9111dfcfbe4715924567 | 
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf | 
| Rds On (Max) @ Id, Vgs: | b29c0921b70eff17f7c33da3ad34886d | 
| Vgs(th) (Max) @ Id: | 82a24afc6181eacc3621863830b1f9c1 | 
| Gate Charge (Qg) (Max) @ Vgs: | 5789212ba6ace12ca7a418f277574048 | 
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 | 
| Input Capacitance (Ciss) (Max) @ Vds: | 2db33bf664674435d276b3a02e797896 | 
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 | 
| Power Dissipation (Max): | 71fbc5583c0ebd33de81061dc2390256 | 
| Operating Temperature: | a05f788eae82918882d3b91ce435570b | 
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 | 
| Supplier Device Package: | e75deed210709724cc39b7c90f58dad6 | 
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |