TK5R1A08QM,S4X

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Mfr. #:

TK5R1A08QM,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS10 TO-220SIS 80V 5.1MOHM

Упаковка:

Tube

Datasheet:

TK5R1A08QM,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK5R1A08QM,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	47916a4829b89bb236b00d9cd3628313
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	69cd040b66f1d7579c778643f7308b0d
Vgs(th) (Max) @ Id:	2d9b2da20b6649bb60f4719b2d5ff14b
Gate Charge (Qg) (Max) @ Vgs:	64ee8dd5f85654f637492b50eb905c25
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9ac0b7cc66a84d7c0a23f7a7d0266a80
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	880570d04bb0963921348c898552e59a
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8