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See Product Specifications
| номер части: | TK60S10N1L,LXHQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 96cd7767f38099df4a6c066b3b4a102d |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | 276b2fa8bb463eca6af826ee80593a5c |
| Vgs(th) (Max) @ Id: | 2c65de7c887041df4691a3701243f129 |
| Gate Charge (Qg) (Max) @ Vgs: | 89853fdd6ed2eb1978d2d551614252a1 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | e08f7c942f3de3457b72a2941cb777fb |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 90f0bb11535d8d8a09a6832b4915536f |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 0a914331c901d37ac7c2db598fa12b21 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
