TK62J60W,S1VQ

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Mfr. #:

TK62J60W,S1VQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 61.8A TO3P

Упаковка:

Tube

Datasheet:

TK62J60W,S1VQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK62J60W,S1VQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	d1ea8ec88ce8ad3582a1b7bf52ed1087
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	4f3ab679a41c4816d0335a02c7364bf2
Vgs(th) (Max) @ Id:	3d476ae8cd142026477808c238815504
Gate Charge (Qg) (Max) @ Vgs:	c881057a7d4b8aa9690ff4ad6401d55b
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	55493809d1d2a8ef554839cd65fb2bea
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	b282bab39a2a125292c899ce91469626
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153