TK65G10N1,RQ

Images are for reference only
See Product Specifications

Mfr. #:

TK65G10N1,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 65A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK65G10N1,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK65G10N1,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	0b9bad357b356d623058f8d160bcff0e
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	94bac1af9269f746ff5115d3990b494f
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	a8f2dfe42ba6bc9b128a04bc4c409c13
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4ac3d511f6cd26197c8cf70d8946aaa3
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ef63d5ff1af8219757fbcf5bac5790d9
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956