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See Product Specifications
| номер части: | TK65G10N1,RQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 0b9bad357b356d623058f8d160bcff0e |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 94bac1af9269f746ff5115d3990b494f |
| Vgs(th) (Max) @ Id: | e059cfdd0b6079599844a290801e2b56 |
| Gate Charge (Qg) (Max) @ Vgs: | a8f2dfe42ba6bc9b128a04bc4c409c13 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4ac3d511f6cd26197c8cf70d8946aaa3 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ef63d5ff1af8219757fbcf5bac5790d9 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 28dc10fa1251e54eadc93e4958741fed |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
