TK6A80E,S4X

Images are for reference only
See Product Specifications

Mfr. #:

TK6A80E,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 800V 6A TO220SIS

Упаковка:

Tube

Datasheet:

TK6A80E,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK6A80E,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	c8334ef5d2640f5ce1f0e830c938d440
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	1bd4b622f56078c99570262df464a75c
Vgs(th) (Max) @ Id:	dd888bf24bc6f28f2ef650d5aad47321
Gate Charge (Qg) (Max) @ Vgs:	f1d4411c14a38876d735f24f8437b43a
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	deb5b984b0682cdba4fcd572c84d9cb8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	880570d04bb0963921348c898552e59a
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8