TK6R8A08QM,S4X

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Mfr. #:

TK6R8A08QM,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS10 TO-220SIS 80V 6.8MOHM

Упаковка:

Tube

Datasheet:

TK6R8A08QM,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK6R8A08QM,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	036d2b0bba9e9111dfcfbe4715924567
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	e73615475c439e207a0800fa42fe760e
Vgs(th) (Max) @ Id:	2c65de7c887041df4691a3701243f129
Gate Charge (Qg) (Max) @ Vgs:	1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	97df36bce5187b3839cb4506c3985666
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	286e8443eab7d18595b7ebdee6abf12d
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8