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See Product Specifications
| номер части: | TK7J90E,S1E |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | d409dc1d35f25724926a975f7246a819 |
| Current - Continuous Drain (Id) @ 25°C: | 9dc91beecc2f6baf922e9c59625131e5 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 1e7a97f11e8e8cfb08994cfd32e33614 |
| Vgs(th) (Max) @ Id: | 4030a31b5ed24b54c489483a6b53aedd |
| Gate Charge (Qg) (Max) @ Vgs: | f1d4411c14a38876d735f24f8437b43a |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | deb5b984b0682cdba4fcd572c84d9cb8 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | a8b3f64040b1225c2cc8b3728386572f |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 802becb26be6cafacf181bb527af5311 |
| Package / Case: | a37ad9863329afbf5b7bab5645143153 |
