TK7S10N1Z,LQ

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Mfr. #:

TK7S10N1Z,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 7A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK7S10N1Z,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK7S10N1Z,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	9dc91beecc2f6baf922e9c59625131e5
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	7df092916d42ad5fba0da56f273ba917
Vgs(th) (Max) @ Id:	b3c2b77f4000524b1efc625ac9e32555
Gate Charge (Qg) (Max) @ Vgs:	1eb4b0df939eacd24ba7c341e34110b4
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c545373505f22fc2a1b515d5e9bf5af9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95