TK8R2A06PL,S4X

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Mfr. #:

TK8R2A06PL,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 50A TO220SIS

Упаковка:

Tube

Datasheet:

TK8R2A06PL,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK8R2A06PL,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	ce3f0be94a9b4ce0c14cb163d98d9a2b
Vgs(th) (Max) @ Id:	283669614ace519f4b9c04b690e997d2
Gate Charge (Qg) (Max) @ Vgs:	4e34eb77b52593f7e432b7ffccb235ef
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	46e2d5c97b057cdb1a651d829ab947d4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	27cc3bf8eca6e148f3a5d1e543db0f2e
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8