TK90S06N1L,LQ

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See Product Specifications

Mfr. #:

TK90S06N1L,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 90A TO252-3

Упаковка:

Tape & Reel (TR)

Datasheet:

TK90S06N1L,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK90S06N1L,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	a873c16e80a8c3db7fe2a325e779f94f
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	733943638d79e60dde2112c0547496b2
Vgs(th) (Max) @ Id:	fddd40c656bc171019d807053034d462
Gate Charge (Qg) (Max) @ Vgs:	a8f2dfe42ba6bc9b128a04bc4c409c13
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4149c799c674010478b62d7904e8dcdd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3e0acc25373e000752c4f0eb235d1748
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95