TPC6012(TE85L,F,M)

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See Product Specifications

Mfr. #:

TPC6012(TE85L,F,M)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 20V 6A VS-6

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC6012(TE85L,F,M) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC6012(TE85L,F,M)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	c8334ef5d2640f5ce1f0e830c938d440
Drive Voltage (Max Rds On, Min Rds On):	ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:	23738941ecf88ab5febf4f073b8a6074
Vgs(th) (Max) @ Id:	664dffdfcdc4592b9a18cdb9881a57f8
Gate Charge (Qg) (Max) @ Vgs:	62f0579625d93bbae84085700fe01591
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	9530c7218381f858315ba5519be20c7b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b4a589eaee5d79dd61727540c38189e5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	af44173cc41050ce2840fd9225626a76
Package / Case:	0be095bf904b063006f66328288b68f9