TPC6110(TE85L,F,M)

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See Product Specifications

Mfr. #:

TPC6110(TE85L,F,M)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 4.5A VS-6

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC6110(TE85L,F,M) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC6110(TE85L,F,M)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	a0eb3db5e247cff19c511d3b3ae59def
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	135648b7cb7fede6ef2f0c5c2ce5c8a5
Vgs(th) (Max) @ Id:	c156ebf3b2e9562a1504e823a9fa3cb7
Gate Charge (Qg) (Max) @ Vgs:	f7fb58f6f88663872c1cfe2690a9fe45
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	43adb633e359d98f963fdcc8fe791c5f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b4a589eaee5d79dd61727540c38189e5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	af44173cc41050ce2840fd9225626a76
Package / Case:	0be095bf904b063006f66328288b68f9