TPC8212-H(TE12LQ,M

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See Product Specifications

Mfr. #:

TPC8212-H(TE12LQ,M

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET 2N-CH 30V 6A SOP8

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC8212-H(TE12LQ,M Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC8212-H(TE12LQ,M
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Arrays
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:	b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):	9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:	d0b1bfd50dd40176f497a2915a6e579b
Rds On (Max) @ Id, Vgs:	f9f61f21b73dcb8fd502d22c8cc11e13
Vgs(th) (Max) @ Id:	e27cb9a9021a7cc3970301d6fa06979f
Gate Charge (Qg) (Max) @ Vgs:	5c327e7b7bf420c01516733ba7df2616
Input Capacitance (Ciss) (Max) @ Vds:	28ec0d7b95bec8b1788db968d07c954e
Power - Max:	1882363e984304a482c0c41d1c7cec73
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	360db61c20c455ecac5e92080f13f3cb
Supplier Device Package:	18462b8273698d51534a6242e89a9e0a