TPCA8010-H(TE12L,Q

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See Product Specifications

Mfr. #:

TPCA8010-H(TE12L,Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 200V 5.5A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPCA8010-H(TE12L,Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPCA8010-H(TE12L,Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	ff481aea56072e963da3cf35af32356a
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	447f0f65e68cd06e1caa232b6fce6bcb
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	2ac289ba9c21e812600d442d24538fc4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	27042d0c415471fbd696a1174eb3f99f
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9