TPCC8002-H(TE12L,Q

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See Product Specifications

Mfr. #:

TPCC8002-H(TE12L,Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 22A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPCC8002-H(TE12L,Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPCC8002-H(TE12L,Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	7fcf50e35c4b8384a29d320d352bf559
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	7425ba4e8b055f045eb9a7574bf9d325
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	5144cbf851e5015698adf3f82ac7ef27
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	efc0febf711d4259f51585632b24002d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bdfeffc496e55aa13b2b7b471c69f4c5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cd5ffa77c25e09aa386bda2b04d3b368
Package / Case:	c79ca9f723e3537386b66c9c45d603c8