TPCC8006-H(TE12LQM

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See Product Specifications

Mfr. #:

TPCC8006-H(TE12LQM

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 22A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPCC8006-H(TE12LQM Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPCC8006-H(TE12LQM
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	7fcf50e35c4b8384a29d320d352bf559
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	8105d826e5ffc9075fb61960fc86cbf2
Vgs(th) (Max) @ Id:	37d70bd0256b55b2d17dd7e1bb911fdc
Gate Charge (Qg) (Max) @ Vgs:	5144cbf851e5015698adf3f82ac7ef27
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f43fa914a7be8390eee7b84853d5c1ae
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	450d6a586c2ccaba993b7e31cee9b087
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cd5ffa77c25e09aa386bda2b04d3b368
Package / Case:	c79ca9f723e3537386b66c9c45d603c8