TPCC8105,L1Q(CM

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See Product Specifications

Mfr. #:

TPCC8105,L1Q(CM

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 23A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPCC8105,L1Q(CM Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPCC8105,L1Q(CM
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	c3edb22a76e627b91fe9e3f101654ddb
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	dd495b7e519edaea036cba5b8ad7832e
Vgs(th) (Max) @ Id:	b51acc836e2aea42bf844545c0460aa5
Gate Charge (Qg) (Max) @ Vgs:	68ed74d0d26e66221879eeb185cf35f3
Vgs (Max):	3c81c5d94681cbb93e31f6893f8db947
Input Capacitance (Ciss) (Max) @ Vds:	5b4bfb763b2a3ca24313ceaaa8a74ad6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bdfeffc496e55aa13b2b7b471c69f4c5
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cd5ffa77c25e09aa386bda2b04d3b368
Package / Case:	c79ca9f723e3537386b66c9c45d603c8