TPH1R712MD,L1Q

Images are for reference only
See Product Specifications

Mfr. #:

TPH1R712MD,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 20V 60A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH1R712MD,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH1R712MD,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):	ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:	c69fa8ac769da072a813058f13ef4c26
Vgs(th) (Max) @ Id:	18bd5d5f85133d059fa755311ccfa70f
Gate Charge (Qg) (Max) @ Vgs:	63389a36e2e14cbd894bb3493b49321e
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	a40b6db77778f9f17631eee47d858308
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	44b670c085128b792b06ef64b5c30aa8
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9