TPH2900ENH,L1Q

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Mfr. #:

TPH2900ENH,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 200V 33A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH2900ENH,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH2900ENH,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	5d3daab095c9fca6e6bd16f959a8a2cc
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	6c82ae2db430e3fdd68e795a5335dd0a
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	730e0e196e702729583c9674383eddc3
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	67486bdc26cfcc3aa0a7972308336db6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	44b670c085128b792b06ef64b5c30aa8
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9