TPH2R306NH1,LQ

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See Product Specifications

Mfr. #:

TPH2R306NH1,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH2R306NH1,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH2R306NH1,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	be21983adee4d699cb25644dbbbc9fb3
Drive Voltage (Max Rds On, Min Rds On):	72187889bca1e415bd77d74221276588
Rds On (Max) @ Id, Vgs:	dfe79b0df0a04c424f076385311df214
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	0e5e0c17b2bce4b4fdcaa9216e9ca15b
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	0041f04bfeef3ce24ab9d23e1d723a00
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ffe232b0b69c27788935c3bb74319df0
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ad86597ef5aba1702db1a085af6ab18b
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b