TPH2R408QM,L1Q

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Mfr. #:

TPH2R408QM,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 80V 120A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH2R408QM,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH2R408QM,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	3fd277d7cf28b9a72d0f41fab225598f
Vgs(th) (Max) @ Id:	92e41164c30579f3defe30c91bbd1c8d
Gate Charge (Qg) (Max) @ Vgs:	74a6448a896a88502ae078c451cdbfee
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	378e88f7c1fcf2e9094670b722564450
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	46667d37b5feb60cbecec03cc2d9c074
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9