TPH4R50ANH1,LQ

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See Product Specifications

Mfr. #:

TPH4R50ANH1,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET 100V 4.5MOHM SOP-ADV(N)

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH4R50ANH1,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH4R50ANH1,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	98dab9e52998c6c599c0e25dd645fa9c
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	38df3cc6a68494b0c8c43d2e26059e3b
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	cb7f32980d4e20761ca926e278c4ed39
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ff6acdad46dcd0d9bd2205d81405dcb7
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6f587185e76d78966d0d4c0f97729b12
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ad86597ef5aba1702db1a085af6ab18b
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b