TPH6R30ANL,L1Q

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Mfr. #:

TPH6R30ANL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 66A/45A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH6R30ANL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH6R30ANL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	8337c613f6aa1ef3299c5498fd0a1025
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	2c198b3392679f3ad6fa5a7f78fb62dd
Vgs(th) (Max) @ Id:	fddd40c656bc171019d807053034d462
Gate Charge (Qg) (Max) @ Vgs:	88e0a1d425c24accd6c4e93ab921d440
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b64bcc761217233f33d24ca299e69cfd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	108064114e39fe32e196856de0bd9984
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9