TPH9R00CQH,LQ

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Mfr. #:

TPH9R00CQH,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS10 SOP-ADV(N) 150V 9MOHM

Упаковка:

Tape & Reel (TR)

Datasheet:

TPH9R00CQH,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPH9R00CQH,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	f5857b5c2d0b94d156ab7cc94df182c6
Current - Continuous Drain (Id) @ 25°C:	3abbfab01ce598b4c0f5ede8a0a0ef12
Drive Voltage (Max Rds On, Min Rds On):	653feb5060f5a70357bbf918bdf8b794
Rds On (Max) @ Id, Vgs:	747681fd659bae62451bc551575278b9
Vgs(th) (Max) @ Id:	6c86cee856c9df44ca4d89fb85aef241
Gate Charge (Qg) (Max) @ Vgs:	5e956ff29411bf2bfe968d20fcfc4199
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3a95ec076b57ed4ceb35030a9eb05d7b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	65e96335adbc0b78d08c1302b300d249
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9