TPHR6503PL1,LQ

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Mfr. #:

TPHR6503PL1,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS9 SOP-ADV(N) PD=210W F=1MHZ

Упаковка:

Tape & Reel (TR)

Datasheet:

TPHR6503PL1,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPHR6503PL1,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	cb4e35d815c72bdb05e0db13b2827c5d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	521e9fbffe1d3b91c740894ba0c8ce8b
Vgs(th) (Max) @ Id:	335f69c535d38282d0c930df5ac1d478
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c022aa3ad41e5d46719265c18df655b9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	65e96335adbc0b78d08c1302b300d249
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ad86597ef5aba1702db1a085af6ab18b
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b