TPHR9003NL,L1Q

Images are for reference only
See Product Specifications

Mfr. #:

TPHR9003NL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 60A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPHR9003NL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPHR9003NL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	c58828de4bcd9c3a5ba103e81480270f
Vgs(th) (Max) @ Id:	e27cb9a9021a7cc3970301d6fa06979f
Gate Charge (Qg) (Max) @ Vgs:	915b63e8679a1e11f610de1b838b4444
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ce4631848b18e74ac382e40da21fc994
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	389282d8601565540c2cfad93cb474e5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9