TPN11006PL,LQ

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See Product Specifications

Mfr. #:

TPN11006PL,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 26A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN11006PL,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN11006PL,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	dce9223ecf68e5b07524c4e0fc03ea4d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	fc1567c1f6e07d4e3bf94c6190f8090d
Vgs(th) (Max) @ Id:	f1e6331c3f85a45c7fac61b038bc3a84
Gate Charge (Qg) (Max) @ Vgs:	988fe98cb9f26fb087a3d0d542dc4408
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	dde83c9ec893c90703de3585f453e029
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	46157fabda65a30946164505bb811764
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9