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номер части: | TPN1110ENH,L1Q |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - FETs, MOSFETs - Single |
Производитель: | Toshiba Semiconductor and Storage |
Упаковка: | Tape & Reel (TR) |
Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
FET Type: | 43272ae8a787f198ca6b6227abc259ef |
Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
Drain to Source Voltage (Vdss): | b86aa01bc1f9484a191794819edcfc06 |
Current - Continuous Drain (Id) @ 25°C: | 5e99b04f784c217715952639f7c01f3f |
Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
Rds On (Max) @ Id, Vgs: | acab431486b20e86635fc44c781a5693 |
Vgs(th) (Max) @ Id: | 2f023d837a472af068aa2c5ef59e023a |
Gate Charge (Qg) (Max) @ Vgs: | 9c776809f0ec6511de1829648c094927 |
Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
Input Capacitance (Ciss) (Max) @ Vds: | cc73a6096f3ea4a752702e2cd443ceb3 |
FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
Power Dissipation (Max): | db177661a54908188c765314b3cbff4e |
Operating Temperature: | a05f788eae82918882d3b91ce435570b |
Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
Supplier Device Package: | bacc9fa9bdb7845a42587e1a1c0a43a3 |
Package / Case: | 67fd376bd79eda48286f8f6e0131d8c9 |