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See Product Specifications
| номер части: | TPN1110ENH,L1Q |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | b86aa01bc1f9484a191794819edcfc06 |
| Current - Continuous Drain (Id) @ 25°C: | 5e99b04f784c217715952639f7c01f3f |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | acab431486b20e86635fc44c781a5693 |
| Vgs(th) (Max) @ Id: | 2f023d837a472af068aa2c5ef59e023a |
| Gate Charge (Qg) (Max) @ Vgs: | 9c776809f0ec6511de1829648c094927 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | cc73a6096f3ea4a752702e2cd443ceb3 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | db177661a54908188c765314b3cbff4e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | bacc9fa9bdb7845a42587e1a1c0a43a3 |
| Package / Case: | 67fd376bd79eda48286f8f6e0131d8c9 |
