TPN19008QM,LQ

Images are for reference only
See Product Specifications

Mfr. #:

TPN19008QM,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 80V 34A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN19008QM,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN19008QM,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	59e6fc9ea45d689c2809c4d653f1b606
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	d4e3f6827fe5c3b93463ccc593dfda97
Vgs(th) (Max) @ Id:	1c8bd2c3333a97403295acdf4465be97
Gate Charge (Qg) (Max) @ Vgs:	a230bee065da054ea2538ec7bec29016
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	0636e1386bffec7ccd3ee7c1de2b8202
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4a1734896f68912e72e7e02d1c3d70e3
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9

In Stock: 15898

Stock:

15898 Can Ship Immediately