TPN2010FNH,L1Q

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Mfr. #:

TPN2010FNH,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 250V 5.6A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN2010FNH,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN2010FNH,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:	46b61b1486cb93fa4b2b4fb38bc189ad
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	bb5123e054387a36e9b7894b37be2ef5
Vgs(th) (Max) @ Id:	2f023d837a472af068aa2c5ef59e023a
Gate Charge (Qg) (Max) @ Vgs:	9c776809f0ec6511de1829648c094927
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	cc73a6096f3ea4a752702e2cd443ceb3
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	db177661a54908188c765314b3cbff4e
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9