TPN2R805PL,L1Q

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See Product Specifications

Mfr. #:

TPN2R805PL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 45V 139A/80A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN2R805PL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN2R805PL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	74cc1af3a16c063ab4efd11d0331fddd
Current - Continuous Drain (Id) @ 25°C:	a68b2f2ed0f2383149d42f3357315896
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	a9927292722ba55bc9cea8d76f332583
Vgs(th) (Max) @ Id:	6a09be56c90f5dfb5409336c420c05a5
Gate Charge (Qg) (Max) @ Vgs:	1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	1dacdb398ecaf08bf0c0514f69eccb7a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	17e79cc6c57805e969211f526b77a7c5
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9