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See Product Specifications
| номер части: | TPN2R805PL,L1Q |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 74cc1af3a16c063ab4efd11d0331fddd |
| Current - Continuous Drain (Id) @ 25°C: | a68b2f2ed0f2383149d42f3357315896 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | a9927292722ba55bc9cea8d76f332583 |
| Vgs(th) (Max) @ Id: | 6a09be56c90f5dfb5409336c420c05a5 |
| Gate Charge (Qg) (Max) @ Vgs: | 1c2591769ca12fd398ae23dd26f13ec6 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1dacdb398ecaf08bf0c0514f69eccb7a |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 17e79cc6c57805e969211f526b77a7c5 |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | bacc9fa9bdb7845a42587e1a1c0a43a3 |
| Package / Case: | 67fd376bd79eda48286f8f6e0131d8c9 |
