TPN4R303NL,L1Q

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Mfr. #:

TPN4R303NL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 40A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN4R303NL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN4R303NL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	3bea801ada2019f6e4c9b4fd24faaa4c
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	4f62c7239e963f713140b8086181a268
Vgs(th) (Max) @ Id:	37d70bd0256b55b2d17dd7e1bb911fdc
Gate Charge (Qg) (Max) @ Vgs:	5066b78e1deb4aa798cd0e7576f557fa
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c455a8ba34deef81db0fbceedb7ce143
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6306640e6bd9f997318c452a59d1bd74
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9