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See Product Specifications
| номер части: | TPN4R712MD,L1Q |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | dee018c5d7cc2ec69b4278e384f4f190 |
| Drive Voltage (Max Rds On, Min Rds On): | ad55046ae2fc0687ff363bc051e1507d |
| Rds On (Max) @ Id, Vgs: | 920ea1297209c5f3f334e4b31948ed24 |
| Vgs(th) (Max) @ Id: | 18bd5d5f85133d059fa755311ccfa70f |
| Gate Charge (Qg) (Max) @ Vgs: | a87588cd1d284b7cc4ece81e913d9f43 |
| Vgs (Max): | ed5450af4f622d5d61945c0592c793a8 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2dfb21c2091954799b31f2e31381751e |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 0c6019a9db9912572c44701aada80fd8 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | bacc9fa9bdb7845a42587e1a1c0a43a3 |
| Package / Case: | 67fd376bd79eda48286f8f6e0131d8c9 |
