TPN4R712MD,L1Q

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See Product Specifications

Mfr. #:

TPN4R712MD,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 20V 36A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN4R712MD,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN4R712MD,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	dee018c5d7cc2ec69b4278e384f4f190
Drive Voltage (Max Rds On, Min Rds On):	ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:	920ea1297209c5f3f334e4b31948ed24
Vgs(th) (Max) @ Id:	18bd5d5f85133d059fa755311ccfa70f
Gate Charge (Qg) (Max) @ Vgs:	a87588cd1d284b7cc4ece81e913d9f43
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	2dfb21c2091954799b31f2e31381751e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0c6019a9db9912572c44701aada80fd8
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9